Stress in sputtered films of near-equiatomic TiNiX on (100) Si: Intrinsic and extrinsic stresses and their modification by thermally activated mechanisms

摘要: The development of intrinsic and extrinsic stresses in TiNi TiNiHf thin films, their relaxation during isochronal isothermal annealing, has been studied both crystalline amorphous materials sputtered onto (100) silicon. compressive stress was sensitive to deposition pressure temperature, film thickness, thermally stable below the temperature. Kinetic parameters for crystallization were determined. A two-stage process identified, with an initial change governed by a structural modification mechanism characterized large activation volume energy, giving way slower, diffusion-controlled mechanism. Tensile developed found relax at rates that depended on deviation composition from stoichiomelry. results are important respect deployment shape-memory films microelectro-mechanical systems (MEMS), which tensile can be exploited enable reversible high-energy mechanical actuation.