Devices with localized strain and stress tuning
作者： You Qian , Rajesh Nair , Rakesh Kumar , Humberto Campanella Pineda
DOI:
关键词: Stress (mechanics) 、 Materials science 、 Optoelectronics 、 Trimming 、 Wafer 、 Residual stress 、 Microelectromechanical systems 、 Stack (abstract data type) 、 Compensation (engineering) 、 Layer (electronics)
摘要: A device, such as a MEMS with stress tuning to achieve desired stack across the wafer. The includes trimming compensation layer over target having different stresses in regions. may include ion beam produce thicknesses regions balance of stress. result almost zero residual an flat device.
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