Modeling and investigation of instabilities in heterojunction interband tunnel diodes for microwave applications
作者： A. Cidronali , G. Collodi , M. Deshpande , C. Toccafondi , N. El-Zein
DOI: 10.1109/MWSYM.2001.967124
关键词: Heterojunction 、 Equivalent circuit 、 Gallium arsenide 、 Quantum tunnelling 、 Optoelectronics 、 Materials science 、 Electronic circuit 、 Diode 、 Analogue electronics 、 Electric power transmission
摘要: The existence of Negative Differential Resistance (NDR) in tunneling diode has led to novel, quantum functional devices and circuits. enhanced functionality these enables design both digital analog circuits with reduced complexity, size better performance. For many applications, the study stability criteria development comprehensive CAD model is great importance for new devices. In this paper we present results modeling investigation instability InGaAs/InAlAs/InGaAs tunnel diodes having different dimensions. Experimental results, which confirm conclusions, are presented.
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