DC and RF characterization of different heterojunction interband tunneling diodes
作者： N. El-Zein , M. Deshpande , G. Kramer , J. Lewis , V. Nair
DOI: 10.1109/ICIPRM.2000.850253
关键词:
摘要: Tunnel diodes are semiconductor devices with the unique property of negative differential resistance (NDR). These show great potential for power generation at high frequencies. Heterostructure interband tunneling (HITDs) when integrated heterojunction FETs (HFETs) produce a three-terminal device that we call HITFET. The NDR characteristics HITFET can be controlled by either gate or drain biases. Devices and circuits based on HITDs HITFETs have shown promise being considered in many digital analog applications. To satisfy variety matching conditions combination different to facilitate integration, it is important flexibility good control over tunnel diode electrical characteristics. We report our investigation In/sub 0.53/Ga/sub (0.47)/As/In/sub (0.52)/Al/sub (0.48)/As/InP material system. study optimize dependence peak current density p/sup +/ doping levels, quantum well widths, layer thicknesses. also introduce new structure almost an order magnitude higher (/spl sim/40,000A/cm/sup 2/) while maintaining reasonable valley ratio approximately 20. investigate frequency properties these compare conventional HITD performance.
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