作者: S. Rotter
DOI: 10.1007/BF02655327
关键词: Crystal growth 、 Epitaxy 、 Dissolution 、 Thin film 、 Optics 、 Heterojunction 、 Chemical physics 、 Chemistry 、 Inorganic compound 、 Lattice (order) 、 Solid solution
摘要: It is shown experimentally that lattice matching important in determining the nature of solid/solution interface behavior during controlled meltback near saturation conditions. We define between a crystalline substrate and solution via solid equilibrium with similar way mismatch conditions can be defined as well. found flat preserved regrowth if matched to even when they are different chemical potentials. Meltback under has been used form graded-gap heterostructures interfaces. suggest using undersaturated solutions whenever an situ removal top part needed prior epitaxial growth.