Dielectric characteristics and electrical conductivity behavior of graphene/Al2O3/p-type silicon structure
作者： Ozkan Bayram , Sema Bilge Ocak , Nuriye Kaymak , Elif Oz Orhan
DOI: 10.1016/J.MATCHEMPHYS.2020.123878
关键词: Materials science 、 Dielectric 、 Optoelectronics 、 Electrical resistivity and conductivity 、 Silicon 、 Biasing 、 Graphene 、 Nanosheet 、 Raman spectroscopy 、 Chemical vapor deposition
摘要: Abstract Graphene nanosheets (Gns) obtained by the chemical vapor deposition (CVD) method have been employed for fabrication of Graphene/Al2O3/p-type silicon (Si) structure. The Raman, scanning-electron-microscopy (SEM) and transmission-electron-microscopy (TEM) used to analyze morphology structural features graphene nanosheet. dielectric electrical-conductivity Si studied in frequency range 10 kHz–400 kHz voltage range, −4 V +4 V at 300 K. experimental outcomes imply that electrical conductivity were found out be powerful functions applied bias voltage. It can seen almost all interface states between metal contribute modify
sci-hub.st 参考文章(23)
Ajay Kumar, Chee Huei, Synthesis and Biomedical Applications of Graphene: Present and Future Trends InTech. ,(2013) , 10.5772/55728
Jingyu Sun, Yanfeng Zhang, Zhongfan Liu, Direct Chemical Vapor Deposition Growth of Graphene on Insulating Substrates ChemNanoMat. ,vol. 2, pp. 9- 18 ,(2016) , 10.1002/CNMA.201500160
H.G. Çetinkaya, A. Kaya, Ş. Altındal, S. Koçyiğit, Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures as function of temperature and voltage Canadian Journal of Physics. ,vol. 93, pp. 1213- 1220 ,(2015) , 10.1139/CJP-2014-0628
P Vitanov, A Harizanova, T Ivanova, Structural and dielectric properties of TiO2 thin films deposited by the sol-gel method on Si substrates Journal of Physics: Conference Series. ,vol. 356, pp. 012041- ,(2012) , 10.1088/1742-6596/356/1/012041
Perihan Durmuş, Mert Yıldırım, Influence of interfacial layer thickness on frequency dependent dielectric properties and electrical conductivity in Al/Bi4Ti3O12/p-Si structures Journal of Vacuum Science and Technology. ,vol. 32, pp. 061512- ,(2014) , 10.1116/1.4900533
İlbilge Dökme, Şemsettin Altındal, Muharrem Gökçen, Frequency and gate voltage effects on the dielectric properties of Au/SiO2/n-Si structures Microelectronic Engineering. ,vol. 85, pp. 1910- 1914 ,(2008) , 10.1016/J.MEE.2008.06.009
Huiyun Wei, Jiangjian Shi, Xin Xu, Junyan Xiao, Jianheng Luo, Juan Dong, Songtao Lv, Lifeng Zhu, Huijue Wu, Dongmei Li, Yanhong Luo, Qingbo Meng, Qiang Chen, Enhanced charge collection with ultrathin AlOx electron blocking layer for hole-transporting material-free perovskite solar cell Physical Chemistry Chemical Physics. ,vol. 17, pp. 4937- 4944 ,(2015) , 10.1039/C4CP04902K
O. Bidault, P. Goux, M. Kchikech, M. Belkaoumi, M. Maglione, Space-charge relaxation in perovskites Physical Review B. ,vol. 49, pp. 7868- 7873 ,(1994) , 10.1103/PHYSREVB.49.7868
S Bilge Ocak, Akil Birkan Selçuk, Gülten Kahraman, AH Selçuk, None, Characterization of electrical properties of Al/maleic anhydride (MA)/p-Si structures by well-known methods Synthetic Metals. ,vol. 191, pp. 83- 88 ,(2014) , 10.1016/J.SYNTHMET.2014.02.024
Ö. Faruk Yüksel, S.B. Ocak, A.B. Selçuk, High frequency characteristics of tin oxide thin films on Si Vacuum. ,vol. 82, pp. 1183- 1186 ,(2008) , 10.1016/J.VACUUM.2008.02.002