Frequency and gate voltage effects on the dielectric properties of Au/SiO2/n-Si structures
作者： İlbilge Dökme , Şemsettin Altındal , Muharrem Gökçen
DOI: 10.1016/J.MEE.2008.06.009
关键词:
摘要: To determine the dielectric constant (@e'), loss (@e''), tangent (tan@d), ac electrical conductivity (@s"a"c) and electric modulus of Au/SiO"2/n-Si structure, measurement admittance technique was used. Experimental results show that values @e', @e'', tan@d, @s"a"c fairly large frequency gate bias dispersion especially at low frequencies due to interface charges polarization. An increase in @e' @e'' were observed with both a decrease an frequency. The is found increasing voltage. In addition, experimental dielectrical data have been analyzed considering formalism. It can be concluded interfacial polarization strong influence on properties metal-insulator-semiconductor (MIS) structures depletion accumulation regions.
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