On the temperature-dependence of the distribution coefficient
作者： F.A. Trumbore , C.R. Isenberg , E.M. Porbansky
DOI: 10.1016/0022-3697(59)90091-5
关键词: Tin 、 Silicon 、 Thermodynamics 、 Melting point 、 Binding energy 、 Chemistry 、 Work (thermodynamics) 、 Germanium 、 Crystallization 、 Crystallography 、 Partition coefficient
摘要: Abstract The solid solubility of tin in silicon has been determined the range from 800°C to melting point silicon, using crystal-pulling and thermal-gradient crystallization techniques. distribution coefficient, k , falls 0.016 at about 6.5 × 10 −4 800°C. Earlier work on tin-germanium system also extended. form temperature-dependence is similar for both systems does not fit into correlation recently proposed by Hall ( J. Phys. Chem. Solids 3 63 (1957)). For these two observed can be explained as being due a large measure departures ideality liquid state. Binding energies germanium calculated solid-solubility data compare favorably with binding Allen 's reciprocal mean postulate covalent bond (J. 27, 810
harvard.edu
elsevier.com
sci-hub.se 参考文章(16)
Linus Pauling, The Nature of the Chemical Bond ,(1939)
C. D. Thurmond, F. A. Trumbore, M. Kowalchik, Germanium Solidus Curves The Journal of Chemical Physics. ,vol. 25, pp. 799- 800 ,(1956) , 10.1063/1.1743083
Communications Research Centre (Canada), Distribution Coefficient of Boron in Germanium The Journal of Chemical Physics. ,vol. 25, pp. 648- 650 ,(1956) , 10.1063/1.1743020
J. A. Burton, E. D. Kolb, W. P. Slichter, J. D. Struthers, Distribution of Solute in Crystals Grown from the Melt. Part II. Experimental The Journal of Chemical Physics. ,vol. 21, pp. 1991- 1996 ,(1953) , 10.1063/1.1698729
Kurt Weiser, Theoretical calculation of distribution coefficients of impurities in germanium and silicon, heats of solid solution Journal of Physics and Chemistry of Solids. ,vol. 7, pp. 118- 126 ,(1958) , 10.1016/0022-3697(58)90252-X
C. L. Luke, Photometric Determination of Tin with Phenylfluorone Analytical Chemistry. ,vol. 28, pp. 1276- 1279 ,(1956) , 10.1021/AC60116A012
R.N. Hall, Variation of the distribution coefficient and solid solubility with temperature Journal of Physics and Chemistry of Solids. ,vol. 3, pp. 63- 73 ,(1957) , 10.1016/0022-3697(57)90049-5
R.A. Oriani, R.N. Hall, Endothermicity and positive excess entropy in solid solutions in germanium and silicon Journal of Physics and Chemistry of Solids. ,vol. 6, pp. 97- 99 ,(1958) , 10.1016/0022-3697(58)90224-5
Howard Reiss, Chemical Effects Due to the Ionization of Impurities in Semiconductors The Journal of Chemical Physics. ,vol. 21, pp. 1209- 1217 ,(1953) , 10.1063/1.1699165
J. A. Burton, R. C. Prim, W. P. Slichter, The Distribution of Solute in Crystals Grown from the Melt. Part I. Theoretical The Journal of Chemical Physics. ,vol. 21, pp. 1987- 1991 ,(1953) , 10.1063/1.1698728