Fermi level stabilization at semiconductor surfaces
作者： J. Van Laar , J.J. Scheer
DOI: 10.1016/0039-6028(65)90043-9
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摘要: Abstract Photoelectric measurements have been carried out on silicon single crystals covered with small amounts of indium. It turns that for low stages coverage the only effect indium photoemission is a parallel shift whole spectral yield curve to lower energy. Therefore it concluded Fermi level stabilized at surface respect band edges. Based this stabilization and other experimental results described in literature, an estimate obtained total number interband states their distribution
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