Preparation and Characterization of ZnO Nanorods, Nanowalls, and Nanochains
作者： T. Premkumar , Y. F. Lu , K. Baskar
DOI: 10.1007/978-81-322-1160-0_11
关键词: Zinc 、 Pulsed laser deposition 、 Doping 、 Nanorod 、 Chemical engineering 、 Silicon 、 Materials science 、 Gallium nitride 、 Substrate (electronics) 、 Sapphire
摘要: The vertically aligned zinc oxide (ZnO) nanorods were synthesized on silicon (Si) substrate using high-pressure pulsed laser deposition (HPPLD). ZnO obtained at the temperature of 650 °C, oxygen partial pressure 7 Torr, and target–substrate distance 25 mm. influence lattice mismatch including gallium nitride (GaN-2 %), sapphire (Al2O3-18 Si (40 %) growth nanowalls was examined. interlinked GaN substrate, whereas Al2O3 substrates. magnesium (Mg) doping has influenced morphological transition from to nanochains. chain-like structures for Mg-doped target. mechanism been proposed formation nanorods, nanowalls, strong (0002) peak E2H mode confirmed that nanochains are preferentially oriented along c-axis have good crystalline quality. near band edge emission (NBE) 3.27 eV revealed optical properties
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