作者: C. C. Wu , D. S. Wuu , P. R. Lin , T. N. Chen , R. H. Horng
DOI: 10.1007/S11671-009-9257-2
关键词: Chemical vapor deposition 、 Thin film 、 Chamber pressure 、 Nucleation 、 Nanochemistry 、 Torr 、 Volumetric flow rate 、 Materials science 、 Surface roughness 、 Nanotechnology 、 Chemical engineering
摘要: ZnO was grown on sapphire substrate by metal–organic chemical vapor deposition using the diethylzinc (DEZn) and oxygen (O2) as source chemicals at 500 °C. Influences of chamber pressure O2/DEZn ratio structural properties were discussed. It found that has significant effects morphology could result in various structures including pyramid-like, worm-like, columnar grain. When kept 10 Torr, lowest full width half-maximum (002) 175 arc second can be obtained. On other hand, lowering DEZn flow rate, crystal quality improved. Under high nanowall-network to grow vertically without any metal catalysts. suggests higher rate promotes three-dimensional growth mode resulting increased surface roughness. Therefore, some tip act nucleation site. In this work, process our nanowall networks is said follow self-catalyzed mechanism under high-DEZn rate.