Cross-sectional STM study of InAs quantum dots for laser devices
作者： H. Eisele , O. Flebbe , T. Kalka , M. Dähne-Prietsch
DOI: 10.1002/(SICI)1096-9918(199905/06)27:5/6<537::AID-SIA522>3.0.CO;2-R
关键词: Quantum dot 、 Quantum tunnelling 、 Lasing threshold 、 Indium arsenide 、 Relaxation (NMR) 、 Electronic structure 、 Condensed matter physics 、 Gallium arsenide 、 Stress relaxation 、 Chemistry
摘要: We present cross-sectional scanning tunnelling microscopy results of stacked InAs quantum dots embedded in GaAs grown by metal-organic chemical vapour deposition, for which room temperature lasing has been demonstrated recently. The fivefold stack shows a perfect vertical alignment and layer-dependent dot shape, is related to local strain during the growth process. For low voltages, corrugation mainly due different electronic structure bost observed, while case higher voltages observed topographic elevations at positions are more an outward relaxation strained cleavage surface. A numerical simulation upon theory elasticity agrees well with heights protrusions.
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