Determination of the outward relaxation of cleaved strained InAs structures by scanning tunneling microscopy
作者： D.M. Bruls , P.M. Koenraad , M. Hopkinson , J.H. Wolter , H.W.M. Salemink
DOI: 10.1016/S0169-4332(01)00861-3
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摘要: When a semi-conductor structure containing strained layers such as quantum wells (QWs) or dot is cleaved, the surface will relax outward in order to release built-in strain. This relaxation directly linked composition of layers, and can thus provide accurate information about local these layers. By using cross-sectional scanning tunneling microscopy (X-STM) it possible measure this relaxation. The measured height profiles, however, are also dependent on chemical surface, resulting an extra contrast images. In analyze only relaxation, necessary suppress latter component STM measurements. be achieved by choosing proper tunnel conditions.
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