Contribution of Surface Resonances to Scanning Tunneling Microscopy Images: (110) Surfaces of III-V Semiconductors

摘要: We show that the conventional dangling bond picture is insufficient to explain scanning tunneling microscopy (STM) images of III-V (110) semiconductor surfaces. Voltage-dependent STM combined with ab initio electronic structure calculations give evidence surface resonances fundamentally change InP, GaP, and GaAs (110). The occupied state dominates at negative voltages, but its counterpart, empty state, only relevance for small positive voltages. are rather governed by which lead a 90\ifmmode^\circ\else\textdegree\fi{} rotation apparent rows.