Composition profiling at the atomic scale in III–V nanostructures by cross-sectional STM
作者： P.M. Koenraad , D.M. Bruls , J.H. Davies , S.P.A. Gill , Fei Long
DOI: 10.1016/S1386-9477(02)00860-3
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摘要: Using cross-sectional STM we have studied the local composition in III/V nanostructures such as GaAs/InGaAs quantum wells, InGaNAs/InP wells and dots, InAs/GaAs self-assembled dots. We are able to determine by either simply counting constituent atoms, measuring lattice constant or relaxation of cleaved surface due elastic field buried strained nanostructures.
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