Processes for deposition of thin films of crystalline silicon on graphite
作者： Charles Excoffon , Jean Ricard
DOI:
关键词: Thin film 、 Strained silicon 、 Composite material 、 Substrate (electronics) 、 Materials science 、 Silicon 、 Crystalline silicon 、 Graphite 、 Nanotechnology 、 Drop (liquid) 、 Nanocrystalline silicon
摘要: Processes for the continuous deposition of crystalline silicon on graphite substrates, being undoped or N- P-doped and substrates useful photovoltaic cells other electronic devices, processes comprising placing in at least one crucible having a capillary port with vertical axis its lower part; bringing to melting point; substrate into contact pendant drop formed mouth capillary; moving selected speed constant predetermined direction; removing coated substance chosen time intervals.
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