Monolithically integrated semiconductor power device

作者: Franco Dr Bertotti , Salvatore Dr Musumeci , Giuseppe Ferla , Salvatore Raciti

DOI:

关键词: Semiconductor deviceDarlington transistorField-effect transistorSemiconductorChipPower semiconductor deviceTransistorDiscrete circuitEngineeringElectrical engineering

摘要: A monolithic semiconductor device including an integrated control circuit and a pair of power transistors in Darlington configuration the same chip solves problem ON-OFF switching which is prevented by presence parasitic within structure, these preventing correct operation at saturation. The solution involves suitable arrangement components chip, with output transistor disposed intermediate position between drive circuit. addition shields, further reduces damaging effects transistors.