作者: Franco Dr Bertotti , Salvatore Dr Musumeci , Giuseppe Ferla , Salvatore Raciti
DOI:
关键词: Semiconductor device 、 Darlington transistor 、 Field-effect transistor 、 Semiconductor 、 Chip 、 Power semiconductor device 、 Transistor 、 Discrete circuit 、 Engineering 、 Electrical engineering
摘要: A monolithic semiconductor device including an integrated control circuit and a pair of power transistors in Darlington configuration the same chip solves problem ON-OFF switching which is prevented by presence parasitic within structure, these preventing correct operation at saturation. The solution involves suitable arrangement components chip, with output transistor disposed intermediate position between drive circuit. addition shields, further reduces damaging effects transistors.