Etching titanium nitride using carbon-fluoride and carbon-oxide gas
作者： Peter Keswick , Jeffrey Marks
DOI:
关键词: Nitride 、 Inorganic chemistry 、 Carbon 、 Layer (electronics) 、 Materials science 、 Etching (microfabrication) 、 Oxide 、 Titanium nitride 、 Substrate (electronics) 、 Plasma
摘要: A process for etching titanium nitride on a substrate 20 is described. In the process, having layer 24c thereon, and an insulative oxide 26 placed in chamber 42. Either single stage, or multiple stage version, of then effected to etch layers. are etched by introducing etchant gas comprising carbon-fluoride carbon-oxide into 42, generating plasma from gas. The comprises first which using generated gas, second Suitable gases comprise CF 3 , 4 CH F, CHF C 2 F 6 8 10 suitable CO .
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