Design and analysis of a WLAN CMOS power amplifier using multiple-gated transistor technique

作者: Hang Liu , Chirn Chye Boon , Manh Anh Do , Kiat Seng Yeo

DOI: 10.1002/MMCE.20499

关键词: BiasingLinear amplifierElectronic engineeringElectrical engineeringRF power amplifierCommon sourceLinearityAmplifierDirect-coupled amplifierTransistorEngineeringElectrical and Electronic EngineeringComputer Graphics and Computer-Aided DesignComputer Science Applications

摘要: This article focused on 5.2 GHz highly integrated power amplifier for IEEE 802.11a WLAN application. Multiple-gated transistor technique was used to improve linearity. A new approach choosing the bias voltage of auxiliary by analyzing shift gate is in design. The simulated results proposed two-stage differential indicate 25.28 dBm P1-dB, 32.87% PAE, and 26.18 saturated output with a dB P1-dB improvement compared conventional single amplifier. © 2011 Wiley Periodicals, Inc. Int J RF Microwave CAE, 2011.

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