作者: Hang Liu , Chirn Chye Boon , Manh Anh Do , Kiat Seng Yeo
DOI: 10.1002/MMCE.20499
关键词: Biasing 、 Linear amplifier 、 Electronic engineering 、 Electrical engineering 、 RF power amplifier 、 Common source 、 Linearity 、 Amplifier 、 Direct-coupled amplifier 、 Transistor 、 Engineering 、 Electrical and Electronic Engineering 、 Computer Graphics and Computer-Aided Design 、 Computer Science Applications
摘要: This article focused on 5.2 GHz highly integrated power amplifier for IEEE 802.11a WLAN application. Multiple-gated transistor technique was used to improve linearity. A new approach choosing the bias voltage of auxiliary by analyzing shift gate is in design. The simulated results proposed two-stage differential indicate 25.28 dBm P1-dB, 32.87% PAE, and 26.18 saturated output with a dB P1-dB improvement compared conventional single amplifier. © 2011 Wiley Periodicals, Inc. Int J RF Microwave CAE, 2011.