Sum frequency generation spectroscopy study of hydrogenated stepped Si(111) surfaces made by molecular hydrogen exposure
作者： K.T.T. Hien , M.A. Sattar , Y. Miyauchi , G. Mizutani , H.N. Rutt
DOI: 10.1016/J.SUSC.2017.04.007
关键词: Sum frequency generation spectroscopy 、 Hydrogen 、 Sum-frequency generation 、 Chemistry 、 Analytical chemistry 、 Isotropic etching 、 Vibration 、 Wafer 、 Base (chemistry) 、 Polarization (waves)
摘要: Abstract Hydrogen adsorption on stepped Si(111) surfaces 9.5° miscut in the [ 1 2 ] direction has been investigated situ a UHV chamber with base pressure of ~10−8 Pa. The H-Si(111)1×1 surface was prepared by exposing wafer to ultra-pure hydrogen gas at ~470 Pa. Termination terraces and steps observed sum frequency generation (SFG) several polarization combinations such as ppp, ssp, pps, spp, psp, sps, pss sss. Here 1st, 2nd 3rd symbols indicate SFG, visible IR polarizations, respectively. ppp ssp-SFG clearly showed only two modes: Si-H stretching vibration terrace mode 2082 cm−1 (A) vertical step dihydride 2094 cm−1 (C1). Interesting points are appearance C1 contrast previous SFG spectrum same angle wet chemical etching. We suggest that formation its orientation depend strongly preparation method.
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