EPR studies of point defects in Cu-III–VI2 chalcopyrite semiconductors
作者： K. Sato
DOI: 10.1016/J.MSSP.2003.07.024
关键词: Nuclear magnetic resonance 、 Chalcopyrite 、 Materials science 、 Photoluminescence 、 Semiconductor 、 Optical spectra 、 Impurity 、 Pl spectra 、 Crystallography 、 Crystallographic defect 、 Electron paramagnetic resonance
摘要: EPR and PL spectra were measured to investigate point defects in I–III–VI2 type chalcopyrite semiconductors where the group I element is Cu. Taking into account various optical spectra, signals observed assigned defect centers involving residual Fe impurities Cu-vacancies. Some of found form defectcomplexes.
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