Investigation of addition of silicon on the electrical properties of low temperature solution processed SiInZnO thin film transistor
作者： Jun Young Choi , Sang Sig Kim , Sang Yeol Lee
DOI: 10.1007/S10971-015-3623-6
关键词: Oxygen 、 Materials science 、 Doping 、 Thin-film transistor 、 Analytical chemistry 、 Silicon 、 Threshold voltage 、 Solution process 、 Oxide 、 Oxide thin-film transistor
摘要: Silicon indium zinc oxide (SIZO) TFTs are prepared by solution process at low temperature. The SIZO were investigated with respect to optical, electrical properties and structure. effect of silicon contents into an IZO as a function concentration from 0.01 0.4 mol%. has more oxidized than In or Zn due the standard electrode potential. As Si increased, threshold voltage shifted toward positive direction off current decreased, systematically. process. Carrier generation originated oxygen vacancy could be modified adding since suppressor. This is also related origin defect state which was observed involved creation vacancies. OII/Otot ratio decreased increase doping contents, indicating that addition atoms decreases carrier lack act major in TFTs. molar ratios can effectively control saturation mobility.
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