The edge termination controlled kinetics in graphene chemical vapor deposition growth
作者： Haibo Shu , Xiaoshuang Chen , Feng Ding
DOI: 10.1039/C4SC02223H
关键词: Chemical engineering 、 Graphene foam 、 Nanotechnology 、 Graphene 、 Partial pressure 、 Graphene nanoribbons 、 Materials science 、 Kinetics 、 Graphene oxide paper 、 Chemical vapor deposition 、 Hydrogen
摘要: Understanding the kinetics of graphene chemical vapor deposition (CVD) growth is crucial for desired growth. Depending on partial pressure hydrogen in carrier gas, temperature and type substrate, both armchair (AC) zigzag (ZZ) edges can be either passivated by a metal surface or terminated atoms. Owing to large barrier incorporating C atoms, rate H significantly slower than that ones. Based this understanding, various behaviours at different temperatures, H2 catalyst surfaces are satisfactorily explained strategy growing edge-controlled domains predicated.
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