Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging

摘要: In the transition from graphene to graphite, addition of each individual layer modifies electronic structure and produces a different material with unique properties. Controlled growth few-layer is therefore fundamental interest will provide access materials engineered structure. Here we combine isothermal etching experiments in situ scanning electron microscopy reveal stacking sequence interlayer coupling strength graphene. The observed layer-dependent rates relative graphene–graphene graphene–substrate interaction resulting mode adlayer growth. Scanning tunnelling density functional theory calculations confirm strong between edge atoms platinum. Simulated confirms that can be viewed as reversed This work demonstrates real-time imaging under controlled atmosphere powerful method for designing synthesis protocols sp2 carbon nanostructures graphite. preparation promising, yet challenging technological protocol. Here, authors perform during chemical vapour deposition hydrogen etching, gain insight into mechanisms graphene-substrate interaction.