The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

摘要: The exceptional properties of graphene make it a promising candidate in the development next-generation electronic, optoelectronic, photonic and photovoltaic devices. A holy grail research is synthesis large-sized single-crystal graphene, which absence grain boundaries guarantees its excellent intrinsic high performance Nowadays, most attention has been drawn to suppression nucleation density by using low feeding gas during growth process allow only one nucleus grow with enough space. However, because random event new nuclei are likely form very long process, difficult achieve industrial-level wafer-scale or beyond (e.g. 30 cm diameter) graphene. Another possible way obtain large realize ultrafast growth, where once forms, grows up so quickly before form. Therefore provides direction for also great significance large-scale production films (fast more time-efficient cost-effective), accelerate various applications industry.