Investigation of turn-on voltage shift in organic ferroelectric transistor with high polarity gate dielectric
作者： C.A. Nguyen , P.S. Lee , S.G. Mhaisalkar
DOI: 10.1016/J.ORGEL.2007.01.010
关键词: Analytical chemistry 、 Charge carrier 、 Field-effect transistor 、 Organic electronics 、 Thin-film transistor 、 Threshold voltage 、 Condensed matter physics 、 Organic semiconductor 、 Materials science 、 Dielectric 、 Gate dielectric 、 Electrical and Electronic Engineering 、 Materials Chemistry 、 Electronic, Optical and Magnetic Materials 、 General chemistry 、 Biomaterials
摘要: Abstract Large positive shifts of turn-on voltage Vto were observed in ferroelectric organic thin film transistor using P(VDF-TrFE) copolymer (57–43 mol%) as gate insulator during OFF to ON state sweeping. The shift the transfer characteristic up +25 V is attributed accumulation mobile charge carriers (holes) pentacene layer even device state. phenomena first discussed on basis a negative surface potential created by dipole field polar dielectric and trap states an semiconductor layer. It was however found that these unable fully address strong due presence large polarization A mechanism polarization-compensating charges which are injected region next proposed examined understand phenomenon. change with different magnitude pulses, corresponds amount for compensation. Time measurement drain current shows transient decaying behavior when bias switched from polarity confirms trapping insulator.
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