Physics of the ferroelectric nonvolatile memory field effect transistor
作者： S. L. Miller , P. J. McWhorter
DOI: 10.1063/1.351910
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摘要: The operation of the ferroelectric nonvolatile memory field effect transistor is theoretically examined extensively for the first time. The ferroelectric transistor device properties are derived by combining the silicon charge‐sheet model of metal‐oxide‐semiconductor field‐effect transistor device operation with Maxwell's first equation which describes the properties of the ferroelectric film. The model we present describes ferroelectric transistor I‐V and C‐V behavior when time‐dependent voltages are applied which result in hysteresis due to …
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C. B. Sawyer, C. H. Tower, Rochelle Salt as a Dielectric Physical Review. ,vol. 35, pp. 269- 273 ,(1930) , 10.1103/PHYSREV.35.269
S. L. Miller, P. J. McWhorter, T. A. Dellin, G. T. Zimmerman, Effect of temperature on data retention of silicon‐oxide‐nitride‐oxide‐semiconductor nonvolatile memory transistors Journal of Applied Physics. ,vol. 67, pp. 7115- 7124 ,(1990) , 10.1063/1.345062
Shu-Yau Wu, A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor IEEE Transactions on Electron Devices. ,vol. 21, pp. 499- 504 ,(1974) , 10.1109/T-ED.1974.17955
P.M. Heyman, G.H. Heilmeier, A ferroelectric field effect device Proceedings of the IEEE. ,vol. 54, pp. 842- 848 ,(1966) , 10.1109/PROC.1966.4889
J.R. Brews, A charge-sheet model of the MOSFET Solid-State Electronics. ,vol. 21, pp. 345- 355 ,(1978) , 10.1016/0038-1101(78)90264-2
S. L. Miller, R. D. Nasby, J. R. Schwank, M. S. Rodgers, P. V. Dressendorfer, Device modeling of ferroelectric capacitors Journal of Applied Physics. ,vol. 68, pp. 6463- 6471 ,(1990) , 10.1063/1.346845
J.L. Moll, Y. Tarui, A new solid state memory resistor IEEE Transactions on Electron Devices. ,vol. 10, pp. 338- 338 ,(1963) , 10.1109/T-ED.1963.15245
S. L. Miller, P. J. McWhorter, A predictive model of electron and hole decay in silicon‐nitride‐oxide‐silicon nonvolatile memory transistors experiencing arbitrary thermal environments Journal of Applied Physics. ,vol. 70, pp. 4569- 4576 ,(1991) , 10.1063/1.350341
R. Zuleeg, H.H. Wieder, Effect of ferroelectric polarization on insulated-gate thin-film transistor parameters Solid-state Electronics. ,vol. 9, pp. 657- 661 ,(1966) , 10.1016/0038-1101(66)90010-4
K. Sugibuchi, Y. Kurogi, N. Endo, Ferroelectric field‐effect memory device using Bi4Ti3O12 film Journal of Applied Physics. ,vol. 46, pp. 2877- 2881 ,(1975) , 10.1063/1.322014