850-nm Zn-diffusion vertical-cavity surface-emitting lasers with with oxide-relief structure for high-speed and energy-efficient optical interconnects from very-short to medium (2km) reaches

摘要: High-speed and “green” ~850 nm vertical-cavity surface-emitting lasers (VCSELs) have lately attracted lots of attention due to their suitability for applications in optical interconnects (OIs). To further enhance the speed its maximum allowable linking distance VCSELs are two major trends meet requirement OI next generation data centers. Recently, by use advanced 850 VCSEL technique, rate as high 64 Gbit/sec over 57m 20 2km MMF transmission been demonstrated, respectively. Here, we will review our recent work about Zn-diffusion with oxide-relief apertures above-mentioned performances. By using Zn-diffusion, can not only reduce device resistance but also manipulate number modes benefit transmission. Combing such device, which has excellent single-mode (SMSR >30 dB) high-power (~7mW) performance, modulation format (OFDM), record-high bit-rate-distance-product through (2.3 km×28 Gbit/sec) demonstrated. Furthermore, selective etching away oxide aperture inside VCSEL, significant enhancement speed, D-factor, reliability be observed. With unique structure, >40 energy-efficient 100m under extremely low-driving current density (<10kA/cm2) successfully