Oxide-Relief and Zn-Diffusion 850-nm Vertical-Cavity Surface-Emitting Lasers With Extremely Low Energy-to-Data-Rate Ratios for 40 Gbit/s Operations

摘要: We demonstrate novel structures of a vertical-cavity surface-emitting laser (VCSEL) for high-speed (~40 Gbit/s) operation with ultralow power consumption performance. Downscaling the size oxide aperture VCSELs is one most effective ways to reduce during operation. However, such miniaturized apertures (~2 μm diameter) in will result large differential resistance, optical single-mode output, and small maximum output (<; 1 mW). These characteristics seriously limit electrical-to-optical (E-O) bandwidth device reliability. By use oxide-relief Zn-diffusion techniques our demonstrated 850-nm VCSELs, we can not only release burden imposed on downscaling current-confined high speed low-power performance, but also manipulate number modes inside cavity maximize E-O product bit-rate transmission distance an OM4 fiber. State-of-the-art dynamic performances at both room temperature 85 °C operations be achieved by device. include extremely D-factors (~13.5 GHz/mA1/2), as well record-low energy-to-data ratios (EDR: 140 fJ/bit) 34 Gbit/s operation, error-free over 0.8-km multimode fiber ratio (EDDR: 175.5 fJ/bit.km) 25 Gbit/s.