Exploring voltage-dependent ion channels in silico by hysteretic conductance.

摘要: Kinetic models of voltage-dependent ion channels are normally inferred from time records macroscopic current relaxation or microscopic single channel data. A complementary explorative approach is outlined. Hysteretic conductance refers to delays in response voltage changes, at either levels observation. It enables assessments model assumptions and gating schemes channels, e.g. independent versus cooperative gating, multiple modes. Under the Hodgkin-Huxley condition under ideal measurement conditions, hysteretic makes it also possible estimate rate functions. The argument mainly theoretical, based on experimental observations, illustrated by simulations Markov kinetic models.