Growth and polarization features of highly (100) oriented Pb(Zr0.53Ti0.47)O3 films on Si with ultrathin SiO2 buffer layer
作者： Y. Lin , B. R. Zhao , H. B. Peng , B. Xu , H. Chen
DOI: 10.1063/1.122589
关键词: Thin film 、 Phase purity 、 Buffer (optical fiber) 、 Optoelectronics 、 Nuclear magnetic resonance 、 Polarization (waves) 、 Grain size 、 Ferroelectricity 、 Materials science 、 Pulsed laser deposition 、 Coercivity
摘要: Highly (100) oriented Pb(Zr0.53Ti0.47)O3 (PZT) films were prepared on Si substrates with ultrathin SiO2 buffer layer by pulsed laser deposition. Hysteresis measurements show that saturation polarization, remnant polarization and coercive field of the reach 26 μC/cm2, 10 μC/cm2 70 kV/cm, respectively. The thickness is found to play a significant role phase purity orientation PZT as well prevention interdiffusion. It also grain size interdiffusion between are key factors for ferroelectric properties films, which discussed together synthesis condition in detail.
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