Interface control of Pb(ZrxTi1 − x)O3 thin film on silicon substrate with heteroepitaxial YSZ buffer layer
作者： Susumu Horita , Tetsuya Naruse , Mikio Watanabe , Atsushi Masuda , Tsuyoshi Kawada
DOI: 10.1016/S0169-4332(97)80119-5
关键词:
摘要: The interface between a PZT film and an Si(100) substrate was controlled by using heteroepitaxial YSZ buffer layer. A 10 nm thick layer able to prevent the from reacting with Si at temperature of 650°C produced highly c-axis-oriented perovskite film. polarization-voltage hysteresis measurement showed that PZT/YSZ/Si structure had ferroelectric properties although leakage current relatively large. From results capacitance-voltage current-voltage characteristics, it speculated this crystalline defects or carrier traps which generated large absorption short relaxation time constants.
harvard.edu
elsevier.com
sci-hub.se 参考文章(13)
Yushi Shichi, Satoshi Tanimoto, Takaaki Goto, Koichi Kuroiwa, Yasuo Tarui, Interaction of PbTiO3 Films with Si Substrate Japanese Journal of Applied Physics. ,vol. 33, pp. 5172- 5177 ,(1994) , 10.1143/JJAP.33.5172
Takashi Hase, Kazuo Hirata, Kazushi Amanuma, Naokichi Hosokawa, Yoichi Miyasaka, Preparation of Pb(Zr, Ti)O3 Thin Films by Multitarget Sputtering Japanese Journal of Applied Physics. ,vol. 33, pp. 5244- 5248 ,(1994) , 10.1143/JJAP.33.5244
E. V. Pechen, R. Schoenberger, B. Brunner, S. Ritzinger, K. F. Renk, M. V. Sidorov, S. R. Oktyabrsky, Epitaxial growth of YBa2Cu3O7-δ films on oxidized silicon with yttria- and zirconia-based buffer layers Journal of Applied Physics. ,vol. 74, pp. 3614- 3616 ,(1993) , 10.1063/1.354500
Tadahiko Hirai, Kazuhiro Teramoto, Kazuhito Nagashima, Hiroshi Koike, Shinya Matsuno, Satoshi Tanimoto, Yasuo Tarui, Crystal and electrical characterizations of oriented yttria-stabilized zirconia buffer layer for the metal/ferroelectric/insulator/semiconductor field-effect transistor Japanese Journal of Applied Physics. ,vol. 35, pp. 4016- 4020 ,(1996) , 10.1143/JJAP.35.4016
Takashi Mihara, Hitoshi Watanabe, Electronic Conduction Characteristics of Sol-Gel Ferroelectric $\bf Pb(Zr_{0.4}Ti_{0.6})O_{3}$ Thin-Film Capacitors: Part I Japanese Journal of Applied Physics. ,vol. 34, pp. 5664- 5673 ,(1995) , 10.1143/JJAP.34.5664
Eisuke Tokumitsu, Kensuke Itani, Bum-Ki Moon, Hiroshi Ishiwara, Crystalline Quality and Electrical Properties of PbZrxTi1-xO3 Thin Films Prepared on SrTiO3-Covered Si Substrates Japanese Journal of Applied Physics. ,vol. 34, pp. 5202- 5206 ,(1995) , 10.1143/JJAP.34.5202
Akira Fujisawa, Masahiro Furihata, Isamu Minemura, Yoshio Onuma, Tatsuo Fukami, Effect of Zr/Ti Ratio on Crystal Structure of Thin Lead Zirconate-Titanate Films Prepared by Reactive Sputtering Japanese Journal of Applied Physics. ,vol. 32, pp. 4048- 4051 ,(1993) , 10.1143/JJAP.32.4048
G. R. Fox, S. B. Krupanidhi, Nonlinear electrical properties of lead-lanthanum-titanate thin films deposited by multi-ion-beam reactive sputtering Journal of Applied Physics. ,vol. 74, pp. 1949- 1959 ,(1993) , 10.1063/1.354779
Susumu Horita, Masakazu Murakawa, \ast, Takaharu Fujiyama, \ast, Heteroepitaxial Growth of Yttria-Stabilized Zirconia Film on Silicon by Reactive Sputtering. Japanese Journal of Applied Physics. ,vol. 34, pp. 1942- 1946 ,(1995) , 10.1143/JJAP.34.1942
Tadahiko Hirai, KazuhiroTeramoto, Kazuhito Nagashima, Hiroshi Koike, Yasuo Tarui, Characterization of Metal/Ferroelectric/Insulator/Semiconductor Structure with CeO2 Buffer Layer Japanese Journal of Applied Physics. ,vol. 34, pp. 4163- 4166 ,(1995) , 10.1143/JJAP.34.4163