Structural and electrical properties of yttria-stabilized zirconia films with controlled Y content heteroepitaxially grown on Si by reactive sputtering
作者： Susumu Horita , Mikio Watanabe , Atsushi Masuda
DOI: 10.1016/S0921-5107(98)00132-9
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摘要: Abstract Yttria-stabilized zirconia (YSZ) films with controlled Y content were heteroepitaxially grown on (100) Si substrates by dc magnetron sputtering using and Zr metallic targets. was in-situ position control of high-density-plasma region. It is found that the deposited thickness 100 nm between 2.3 19.7 at.% have cubic YSZ structure directly Si, while 1.2 has monoclinic (ZrO 2 ) 1− x (Y O 3 a intermediate layer. The to be changed from during cooling process after deposition. On other hand, 10 regardless content. Both hysteresis width in capacitance–voltage ( C – V characteristics due ion drift leakage current are small for film compared those at.%. opposite properties observed thickness.
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