Advantage of the structure and the electrical properties of epitaxial ultra-thin zirconia gate dielectrics
作者： Takanori Kiguchi , Naoki Wakiya , Junzo Tanaka , Kazuo Shinozaki
DOI: 10.1016/J.MSEB.2007.09.037
关键词: Monoclinic crystal system 、 Tetragonal crystal system 、 Epitaxy 、 High-resolution transmission electron microscopy 、 Dielectric 、 Optoelectronics 、 Hysteresis 、 Materials science 、 Transmission electron microscopy 、 Thin film
摘要: Abstract For this study, the authors fabricated non-doped 0 0 1 epitaxial ZrO 2 gate dielectrics with small density of extrinsic defects and charges in size effect. Wide-angle X-ray reciprocal space mapping high-resolution transmission electron microscope (HRTEM) analyses showed many 90° 180° domains. The planes nearly align out-of-plane direction for 17-nm thin films. On other hand, nanoscale monoclinic phase precipitated coherently a tetragonal matrix 3-nm Capacitance–voltage ( C – V ) measurements suggest that curve film has charge-injection type hysteresis. width is 26 mV less than 2 mV ultra-thin film.
elsevier.com
sci-hub.se 参考文章(18)
Tomoaki Yamada, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani, Effect of Yttria-Stabilized Zirconia Thickness on Crystal Structure and Electric Property of Epitaxial CeO2/Yttria-Stabilized Zirconia Buffer Layer in Metal/Ferroelectric/Insulator/Semiconductor Structure Japanese Journal of Applied Physics. ,vol. 40, pp. 281- 284 ,(2001) , 10.1143/JJAP.40.281
C. Pellet, C. Schwebel, P. Hesto, Physical and electrical properties of yttria-stabilized zirconia epitaxial thin films deposited by ion beam sputtering on silicon Thin Solid Films. ,vol. 175, pp. 23- 28 ,(1989) , 10.1016/0040-6090(89)90803-1
J. C. Wang, S. H. Chiao, C. L. Lee, T. F. Lei, Y. M. Lin, M. F. Wang, S. C. Chen, C. H. Yu, M. S. Liang, A physical model for the hysteresis phenomenon of the ultrathin ZrO2 film Journal of Applied Physics. ,vol. 92, pp. 3936- 3940 ,(2002) , 10.1063/1.1498964
Takanori Kiguchi, Kazuo Shinozaki, Naoki Wakiya, Nobuyasu Mizutani, Improvement of C-V Characteristics and Control of Interlayer Growth of Rare Earth Oxide Stabilized Zirconia Epitaxial Gate Dielectrics Key Engineering Materials. ,vol. 248, pp. 137- 142 ,(2003) , 10.4028/WWW.SCIENTIFIC.NET/KEM.248.137
Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani, Role of Ultra Thin SiOx Layer on Epitaxial YSZ/SiOx/Si Thin Film Integrated Ferroelectrics. ,vol. 51, pp. 51- 61 ,(2003) , 10.1080/10584580390229815
J‐W. Lee, T. E. Schlesinger, A. K. Stamper, M. Migliuolo, D. W. Greve, D. E. Laughlin, Characterization of yttria-stabilized zirconium oxide buffer layers for high-temperature superconductor thin films Journal of Applied Physics. ,vol. 64, pp. 6502- 6504 ,(1988) , 10.1063/1.342068
Susumu Horita, Tetsuya Naruse, Mikio Watanabe, Atsushi Masuda, Tsuyoshi Kawada, Yukinari Abe, Interface control of Pb(ZrxTi1 − x)O3 thin film on silicon substrate with heteroepitaxial YSZ buffer layer Applied Surface Science. ,vol. 117-118, pp. 429- 433 ,(1997) , 10.1016/S0169-4332(97)80119-5
D. K. Fork, D. B. Fenner, R. W. Barton, Julia M. Phillips, G. A. N. Connell, J. B. Boyce, T. H. Geballe, High critical currents in strained epitaxial YBa2Cu3O7−δon Si Applied Physics Letters. ,vol. 57, pp. 1161- 1163 ,(1990) , 10.1063/1.104225
Hirotaka Fujimori, Masatomo Yashima, Masato Kakihana, Masahiro Yoshimura, Structural Changes of Scandia‐Doped Zirconia Solid Solutions: Rietveld Analysis and Raman Scattering Journal of the American Ceramic Society. ,vol. 81, pp. 2885- 2893 ,(2005) , 10.1111/J.1151-2916.1998.TB02710.X
Markus Winterer, Robert Delaplane, Robert McGreevy, X-ray diffraction, neutron scattering and EXAFS spectroscopy of monoclinic zirconia: analysis by Rietveld refinement and reverse Monte Carlo simulations Journal of Applied Crystallography. ,vol. 35, pp. 434- 442 ,(2002) , 10.1107/S0021889802006829