Ferroelectric Na0.5K0.5NbO3 thin films by pulsed laser deposition
作者： Choong-Rae Cho , Alex Grishin , Byung-Moo Moon
DOI: 10.1080/10584580008215638
关键词: Thin film 、 Ceramic 、 Atmospheric temperature range 、 Crystallite 、 Analytical chemistry 、 Ferroelectricity 、 Silicon 、 Pulsed laser deposition 、 Materials science 、 Dielectric
摘要: Abstract Highly c-axis oriented single phase Na0.5K0.5NbO3 (NKN) thin films have been deposited onto polycrystalline Pt80lr20 substrates and SiO2/Si(001) wafers using pulsed laser ablation of stoichiometric ceramic target. Strong self-assembling NKN along the [001] direction has observed. Properties NKN/Pt film structures successfully tailored by oxygen pressure control from ferroelectric state, characterized remnant polarization 12 uC/cm2, dielectric constant ∊ ∼ 520 tan δ 0.024 @ 100 kHz, to superparaelectric state with as low 0.003 = 210 very small 1.7% dispersion in frequency domain 0.4–100 kHz less than 10% variation temperature range 77–415 K. grown show quadrupled super-lattice structure c-axis, loss 0.01, 110 1 MHz. C-V measurements for Au/NKN (270nm)/SiO2/Si MFIS-diode yield memory window 3.26 V at programmable voltage 8 V.
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