Na0.5K0.5NbO3/SiO2/Si thin film varactor
作者： Choong-Rae Cho , Jung-Hyuk Koh , Alex Grishin , Saeed Abadei , Spartak Gevorgian
DOI: 10.1063/1.126159
关键词: Micrometre 、 Amorphous solid 、 Analytical chemistry 、 Electrical resistivity and conductivity 、 Pulsed laser deposition 、 Crystallite 、 Optoelectronics 、 Ceramic 、 Materials science 、 Thin film 、 Dissipation factor
摘要: Perfectly c-axis oriented micrometer thickNa 0.5 K NbO 3 (NKN) films have been prepared on a thermally grown ultrathinSiO 2 template layer onto Si(001) wafer by the pulsed laser deposition technique. A x-ray diffraction θ–2θ scan reveals multiple-cell structuring of single phase NKN film along polar axis, while filmsgrown amorphous ceramic (Corning) glass show mixture slightly and pyrochlore phases. This implies small amount ofSiO crystallites distributed in an matrix inherit orientation promotes highly growth. filmdielectric permittivitye ′ was found to vary from 114.0 107.2 frequency range 1 kHz–1 MHz, resistivity order of2.6×10 10 Ω cm @ 20 kV/cm. The planar interdigital variable reactance device (varactor) based theNKN/SiO /Si thin structure possesses dissipation factor 0.8% at MHz zero bias, electrical tunability 3.1%, nA leakage current V bias room temperature.
scitation.org
harvard.edu
core.ac.uk
chalmers.se
sci-hub.se 参考文章(13)
Mu-Shiang Wu, Wen-Ching Shih, Propagation Characteristics of Surface Acoustic Waves in KNbO3/SrTiO3/Si Layered Structures Japanese Journal of Applied Physics. ,vol. 36, pp. 2192- 2195 ,(1997) , 10.1143/JJAP.36.2192
Choong-Rae Cho, Alex Grishin, Self-assembling ferroelectric Na0.5K0.5NbO3 thin films by pulsed-laser deposition Applied Physics Letters. ,vol. 75, pp. 268- 270 ,(1999) , 10.1063/1.124344
Xin Wang, Ulf Helmersson, Sveinn Olafsson, Staffan Rudner, Lars-David Wernlund, Spartak Gevorgian, Growth and field dependent dielectric properties of epitaxial Na0.5K0.5NbO3 thin films Applied Physics Letters. ,vol. 73, pp. 927- 929 ,(1998) , 10.1063/1.122040
B. H. Hoerman, G. M. Ford, L. D. Kaufmann, B. W. Wessels, Dielectric properties of epitaxial BaTiO3 thin films Applied Physics Letters. ,vol. 73, pp. 2248- 2250 ,(1998) , 10.1063/1.121691
A. Ourmazd, J. A. Rentschler, J. Bevk, Effect of processing on the structure of the Si/SiO2interface Applied Physics Letters. ,vol. 53, pp. 743- 745 ,(1988) , 10.1063/1.100559
Steven C. Witczak, John S. Suehle, Michael Gaitan, An Experimental Comparison of Measurement Techniques to Extract Si-SiO2 Interface Trap Density Solid-state Electronics. ,vol. 35, pp. 345- 355 ,(1992) , 10.1016/0038-1101(92)90238-8
Isao Takahashi, Syougo Okita, Naoki Awaji, Yoshihiro Sugita, Satoshi Komiya, Microcrystallinity at SiO2/Si(0 0 1) interfaces: An effect of annealing Physica B-condensed Matter. ,vol. 245, pp. 306- 310 ,(1998) , 10.1016/S0921-4526(97)00897-1
I Takahashi, T Shimura, J Harada, X-ray diffraction evidence for epitaxial microcrystallinity in thermally oxidized SiO2 thin films on the Si(001) surface Journal of Physics: Condensed Matter. ,vol. 5, pp. 6525- 6536 ,(1993) , 10.1088/0953-8984/5/36/007
X. D. Wu, A. Inam, M. S. Hegde, B. Wilkens, C. C. Chang, D. M. Hwang, L. Nazar, T. Venkatesan, S. Miura, S. Matsubara, Y. Miyasaka, N. Shohata, High critical currents in epitaxial YBa2Cu3O7−xthin films on silicon with buffer layers Applied Physics Letters. ,vol. 54, pp. 754- 756 ,(1989) , 10.1063/1.101471
L. A. Knauss, J. M. Pond, J. S. Horwitz, D. B. Chrisey, C. H. Mueller, Randolph Treece, The effect of annealing on the structure and dielectric properties of BaxSr1−xTiO3 ferroelectric thin films Applied Physics Letters. ,vol. 69, pp. 25- 27 ,(1996) , 10.1063/1.118106