High-performance epitaxial Na0.5K0.5NbO3 thin films by magnetron sputtering
作者： Mats Blomqvist , Jung-Hyuk Koh , Sergey Khartsev , Alex Grishin , Johanna Andréasson
DOI: 10.1063/1.1492854
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摘要: Epitaxial Na0.5K0.5NbO3 (NKN) thin films have been grown on LaAlO3 substrates by rf magnetron sputtering of a stoichiometric, high-density, ceramic target. X-ray diffraction analysis showed c-axis oriented cube-on-cube growth. Micrometer size interdigital capacitor (IDC) structures were defined the surface NKN film using photolithography. The electrical characterization at 1 MHz dissipation factor tan δ 0.010, tunability 16.5% 200 kV/cm and dielectric permittivity er=470. frequency dispersion er between kHz was 8.5% IDCs very good insulating properties with leakage current density order 30 nA/cm2 400 kV/cm. polarization loop exhibits weak ferroelectric hysteresis maximum 23.5 μC/cm2 600 These results are promising for tunable microwave devices based sputtered films.
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