Ionized-oxygen vacancies related dielectric relaxation in heteroepitaxial K0.5Na0.5NbO3/La0.67Sr0.33MnO3 structure at elevated temperature
作者： J. Miao , X. G. Xu , Y. Jiang , L. X. Cao , B. R. Zhao
DOI: 10.1063/1.3242009
关键词: Crystallography 、 Ferroelectricity 、 Dielectric 、 Condensed matter physics 、 Epitaxy 、 Thin film 、 Atmospheric temperature range 、 Materials science 、 Pulsed laser deposition 、 Coercivity 、 Relaxation (physics)
摘要: … parameters of KNN and LSMO films are 3.941 and … strain whereas LSMO layer experiences tensile strain, with tetragonal distortion c / a − 1 ≈ + 1.9 % for KNN and −1.3% for LSMO. …
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