Effects of Pt diffusion barrier layer on the interface reaction and electric properties of PZT film/Si(111) sample
作者： Zhu Yong-Fa , Yan Pei-Yu , Yi Tao , Cao Li-Li , Li Long-Tu
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摘要: The effects of the Pt diffusion barrier layer on interface and reaction, crystallization, dielectric ferroelectric properties PZT/Si(111) sample have been studied using XPS, AES XRD techniques. results indicate that between PZT Si substrate prohibits formation TiCx, TiSix SiO2 species in layer. also completly interrupts from into impedes oxygen air to greatly. Although can not prevent completely reaction silicon, it a stable PZT/Si. reacts with silicon form PtSix Pt/Si, which intensify chemical binding strength substrate. To play good role as layer, must be thinner than 140 nm. existence only promotes crystallization perovskite phase but improves performances
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