作者: Alexander Schwinger , Benjamin Bechen , Christian Nitta , Bedrich J. Hosticka , Rainer Kokozinski
DOI: 10.1109/PRIME.2015.7251396
关键词: Compensation (engineering) 、 Avalanche diode 、 CMOS 、 Optoelectronics 、 Electronic engineering 、 Diode 、 Single-photon avalanche diode 、 Dot pitch 、 Silicon photomultiplier 、 Pixel geometry 、 Materials science
摘要: In recent years, various developments have advanced the field of optical sensors based on single-photon avalanche diodes. this contribution we present two that were designed in 0.35μm CMOS technology. A silicon photomultiplier achieves a fill factor 68 % at 50 μm pixel pitch and allows improved functionality by cointegration application-specific readout electronics. time-gated line sensor with gating times down to 1.5ns serial digital output was optimized geometry suitable for spectroscopy applications. Planned further improvements diode technology, including on-chip temperature compensation, are presented.