Synthesis of ultrathin carbon films by direct current filtered cathodic vacuum arc
作者： H.-S. Zhang , K. Komvopoulos
DOI: 10.1063/1.3098254
关键词: X-ray reflectivity 、 Analytical chemistry 、 X-ray photoelectron spectroscopy 、 Carbon film 、 Carbon 、 Vacuum arc 、 Vacuum deposition 、 Silicon 、 Surface diffusion 、 Materials science
摘要: Filtered cathodic vacuum arc was used to synthesize ultrathin carbon films on silicon substrates. The depth profiles, near-surface chemical composition, fractions of tetrahedral (sp3) and trigonal (sp2) atom hybridizations, roughness, hardness the were determined from Monte Carlo (T-DYN) simulations x-ray reflectivity (XRR), photoelectron spectroscopy (XPS), atomic force microscopy (AFM), surface (SFM) measurements, respectively. Films thickness only a few nanometers possessed smaller sp3 than much thicker films. effective found depend fraction silicon-carbon composition profile. formation different bonds, film growth mechanisms, optimum process conditions for synthesizing are interpreted in context T-DYN, XRR, XPS, AFM, SFM results bombardment, adsorption, diffusion mechanisms.
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