作者: Jun Liu
DOI:
关键词: Dielectric 、 Phase-change memory 、 Insulator (electricity) 、 Phase-change material 、 Computer science 、 Electrical conductor 、 Optoelectronics 、 Electronic engineering
摘要: Methods, devices, and systems associated with phase change memory structures are described herein. One method of forming a structure includes an insulator material on first conductive element dielectric cell, heater self-aligned the element, at least portion formed material, second cell material.