Forming planarized semiconductor structures
作者： Daniel Xu , Jong-Won Lee , Donghui Lu , Jenn Chow , Kyu Min
DOI:
关键词:
摘要: A planarized surface may be formed by initially forming an aperture through insulating layer. The layer and its conformally coated with a conductive material that ultimately acts as planarization stop. then covered another insulator fills the remainder of aperture. Thereafter, structure down to
lens.org 参考文章(6)
Tyler Lowrey, Patrick Klersy, Electrically programmable memory element with raised pore ,(2001)
Tyler A. Lowrey, Three dimensional programmable device and method for fabricating the same ,(2002)
Eugene P. Marsh, Brenda D. Kraus, Process for fabricating RuSixOy-containing adhesion layers ,(2003)
Shaw-Tzeng Hsia, Kuang-Chao Chen, Blanket tungsten etchback process using disposable spin-on-glass ,(1993)
Charles H. Dennison, Phase change memory device on a planar composite layer ,(2002)
Gerd Marxsen, Kashmir S. Sahota, Steven C. Avanzino, Method for multiple phase polishing of a conductive layer in a semidonductor wafer ,(1998)