Three dimensional programmable device and method for fabricating the same
作者： Tyler A. Lowrey
DOI:
关键词: Phase-change memory 、 Electrical engineering 、 Materials science 、 Non-volatile memory 、 Polycrystalline silicon 、 Memory array 、 Layer (electronics) 、 Optoelectronics 、 Diode
摘要: A three-dimensional memory device having polycrystalline silicon diode isolation elements for phase change cells and method fabricating the same. The includes a plurality of stacked to form array. element selects cell. is fabricated by forming on base layer. Additional layers are formed over initial
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