Process for fabricating RuSixOy-containing adhesion layers

摘要: A method for use in the fabrication of integrated circuits includes providing a substrate assembly having surface. An adhesion layer is formed over at least portion The RuSixOy, where x and y are range about 0.01 to 10. may be by depositing RuSixOy chemical vapor deposition, atomic or physical deposition forming ruthenium oxide silicon-containing region performing an anneal form from silicon adjacent region. Capacitor electrodes, interconnects other structures with such layer. Semiconductor devices can include layers RuSixOy.