Deposition of ruthenium and/or ruthenium oxide films
作者： Yoshihide Senzaki
DOI:
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摘要: A method for depositing ruthenium oxide films in the formation of semiconductor devices. More specifically, present invention provides a containing metal and metal-oxygen based on surface substrate (112) system (100) which comprises process chamber (102) houses wafer support (110) gas injector (114).
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