Low Temperature ALD of Noble Metals
作者： Mikko Ritala , Markku Leskelä , Jani Hämäläinen
DOI:
关键词:
摘要: Noble metal films can be deposited by atomic layer deposition (ALD)-type processes. In preferred embodiments, Ir, Pd, and Pt are alternately sequentially contacting a substrate with vapor phase pulses of noble precursor, an oxygen source, hydrogen source. The source is preferably reactive species. Preferably the temperature less than about 200° C. Preferably, 10 seconds.
google.co.uk 参考文章(92)
Yoshihide Senzaki, Deposition of ruthenium and/or ruthenium oxide films ,(2005)
Jun-ichi Taniuchi, Masayuki Saito, Preparation method of bis (alkylcyclopentadienyl) ruthenium ,(2001)
Hiroshi Shinriki, METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR ,(2008)
Wataru Okase, Substrate treatment system ,(1998)
Dan B. Millward, Systems and methods for forming metal-containing layers using vapor deposition processes ,(2004)
Eric Antonissen, Multi-zone atomic layer deposition apparatus and method ,(2005)
Tue Nguyen, Multilayered copper structure for improving adhesion property ,(2002)
Wayne E. Bowers, Barry N. Sprague, Gasoline additives and gasoline containing soluble platinum group metal compounds and use in internal combustion engines ,(1986)
Douglas A. Buchanan, Deborah Ann Neumayer, Precursor source mixtures ,(2000)
Tongbi Jiang, Li Li, Method and apparatus for electroless plating a contact pad ,(1999)