Methods of forming ruthenium-containing films by atomic layer deposition
作者： Neil Boag , Jeff Anthis , Ravi Kanjolia , Rajesh Odedra
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摘要: A method of forming ruthenium-containing films by atomic layer deposition is provided. The comprises delivering at least one precursor to a substrate, the corresponding in structure Formula I: (L)Ru(CO)3 wherein L selected from group consisting linear or branched C2-C6-alkenyl and C1-6-alkyl; optionally substituted with more substituents independently C2-C6-alkenyl, C1-6-alkyl, alkoxy NR1R2; R1 R2 are alkyl hydrogen.
lens.org 参考文章(15)
Yoshihide Senzaki, Deposition of ruthenium and/or ruthenium oxide films ,(2005)
John Anthony Thomas Norman, Volatile beta-ketoiminate and metal beta-diiminate complexes ,(2005)
Er-Xuan Ping, David J. Kubista, Lyle D. Breiner, Cem Basceri, Kevin L. Beaman, Ronald A. Weimer, Trung T. Doan, Lingyi A. Zheng, Methods for forming small-scale capacitor structures ,(2004)
Leonard Forbes, Kie Y. Ahn, Atomic layer-deposited laaio3 films for gate dielectrics ,(2002)
S. Dosanjh, P. Cannard, R. Firth, I. Lealman, R. Moore, L. Rivers, M. Robertson, S. Rushworth, R. Odedra, P. Viswanathan, D. E. Sykes, A. Chew, The development and application of novel Ru precursors for atmospheric pressure MOVPE growth of Ru doped current blocking layers international conference on indium phosphide and related materials. pp. 1- 3 ,(2008) , 10.1109/ICIPRM.2008.4702915
Eugene P. Marsh, Stefan Uhlenbrock, Method of forming ruthenium and ruthenium oxide films on a semiconductor structure ,(2002)
Eugene P. Marsh, Stefan Uhlenbrock, Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide ,(2003)
Sachiko Hashimoto, Tatsuya Sakai, Yasuo Matsuki, Ruthenium compound and process for producing a metal ruthenium film ,(2003)
Anthony Copeland Jones, Precursors for deposition of metal oxide layers or films ,(2004)
Anthony Copeland Jones, Precursors for chemical vapor deposition ,(2002)