Methods for forming small-scale capacitor structures

摘要: The present disclosure provides small scale capacitors (e.g., DRAM capacitors) and methods of forming such capacitors. One exemplary implementation a method fabricating capacitor that includes sequentially first electrode, dielectric layer, second electrode. At least one the electrodes may be formed by a) reacting two precursors to deposit conductive layer at deposition rate, b) depositing second, lower rate precursor monolayer thick exposing another form nanolayer reaction product. in contact with have thickness no greater than about 50 Å.