Electrical characterization of as-grown, annealed and indium-doped Hg1-xZnxTe for x near 0.15
作者： S. Rolland , A. Lasbley , A. Seyni , R. Granger , R. Triboulet
DOI: 10.1051/RPHYSAP:01989002408079500
关键词: Electrical resistivity and conductivity 、 Doping 、 Hall effect 、 Band gap 、 Annealing (metallurgy) 、 Electron mobility 、 Semiconductor 、 Optoelectronics 、 Chemistry 、 Condensed matter physics 、 Indium
摘要:
sci-hub.st 参考文章(21)
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